AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 32 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 350
μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD
= 32 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.4 Adc)
VDS(on)
—
0.22
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
—
1.4
—
pF
Functional Tests (3)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 1600 mA, P
out
= 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps
19
20.2
23
dB
Drain Efficiency
ηD
41
44.1
—
%
Intermodulation Distortion
IMD
—
-30.8
-28
dBc
Input Return Loss
IRL
—
-24
-9
dB
Pout
@ 1 dB Compression Point, CW
(f = 860 MHz)
P1dB
—
320
—
W
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push-pull configuration.
Drains are tied together internally as this is a total device value.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6P9220HR5
MOSFET RF N-CH 28V 47W NI-860C3
MRF6S18060NBR1
MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1
MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5
MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1
MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1
MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5
MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5
MOSFET RF N-CHAN 28V 19W NI-780S
相关代理商/技术参数
MRF6P9220HR3
功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5
功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S18060MBR1
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1
功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1
功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs